The effect of residual mechanical stresses and vacancy defects on the diffusion expansion of the damaged layer during irradiation of BeO ceramics

The paper presents the results of a study on the application of Raman and UV spectroscopy methods to determine the structural damage kinetics in the near-surface layer of BeO ceramics caused by high-dose irradiation with He²⁺ ions. Interest in this type of ceramics is due to the combination of its structural and thermophysical parameters, making these ceramics one of the promising classes of materials for microelectronics and structural materials for nuclear reactors, with the possibility of operation in conditions of heightened radiation background. According to the conducted studies, it was established that with the irradiation fluence growth, changes in the nature of deformation structural distortions associated with the accumulation of residual mechanical stresses of tensile and compressive types are observed. At irradiation fluences of 10¹⁶–5 × 10¹⁶ Не²⁺/cm², tensile stresses play a dominant role in structural distortions, while the value of compressive stresses at fluence growth makes up a small share in the overall nature of the deformations. Moreover, an elevation in the irradiation fluence above 5 × 10¹⁶ He²⁺/cm² leads to a rise in the concentration of defects caused by the formation of oxygen vacancies, as well as He-V_O type complexes, the presence of which is indicated by the halo intensity growth in the Raman spectra, as well as a change in the intensity of the absorption bands. Analysis of changes in thermophysical parameters revealed that a rise in structural distortions associated with the accumulation of complex defects results in thermal conductivity reduction and a deterioration in heat transfer processes associated with partial amorphization of the damaged layer. Moreover, the established direct relationship between the value of residual mechanical stresses and the degradation of thermal conductivity indicates the cumulative effect of destructive changes caused by irradiation, as well as the influence of diffusion mechanisms on the damaged layer thickness growth.