The Role of the Crystal Plane Irradiated by Swift Heavy Ions in the Formation of Defects in MgAl₂O₄ Crystals

Model experiments were performed on the interaction of swift heavy 220 MeV Xe ions with MgAl₂O₄ spinel crystal with (100), (110), and (111) planes. A computational analysis of the energy parameters of Xe ions in MgAl₂O₄ single crystal was performed, and an estimate of the ion range in the near-surface layer (14 μm) was provided. Optical absorption spectrum was analyzed using polarized light and EPR spectroscopy of initial and irradiated crystals. It has been established that at a fluence of 10¹³ cm⁻² in a sample with an orientation plane (110), 35% more optically active F-type centers are formed. It has been shown that optically active centers V|_Al–O⁻ are observed in an unusual, polarized beam.