The time-resolved luminescence characteristics of Ce and Ce/Pr doped YAG ceramics obtained by high pressure technique

L. Grigorjeva; D. Millers; K. Smits; A. Sarakovskis; W. Lojkowski; A. Swiderska-Sroda; W. Strek; P. Gluchowski

doi:10.1016/j.optmat.2011.05.023

The time-resolved luminescence characteristics of Ce and Ce/Pr doped YAG ceramics obtained by high pressure technique

L. Grigorjeva^*
, D. Millers
, K. Smits
, A. Sarakovskis
, W. Lojkowski
, A. Swiderska-Sroda
, W. Strek
, P. Gluchowski

^*Šī darba korespondējošais autors

Spektroskopijas laboratorija, Cietvielu fizikas institūts

University of Latvia
Polish Academy of Sciences
Polish Academy of Sciences

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

11 Atsauces (Scopus)

Kopsavilkums

Transparent Ce and Ce/Pr doped YAG ceramics were prepared under high pressures (up to 8 GPa) and relative low temperature (450 °C). Grain size of the ceramics is less than 50 nm. However unknown defects or disorders strains on grain boundaries caused the additional absorption in these ceramics. The luminescence intensity, spectra and the decay time dependence on pressure applied during ceramic preparation were studied. Concentration of some intrinsic point defect was reduced under the high pressure applied for sintering process. It is shown that formation time of the excited state of Ce luminescence depends on the pressure applied during ceramic sintering.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	986-989
Lapu skaits	4
Žurnāls	Optical Materials
Sējums	34
Izdevuma numurs	6
DOIs	https://doi.org/10.1016/j.optmat.2011.05.023
Publikācijas statuss	Publicēts - apr. 2012

OECD Zinātnes nozare

1.3 Fizika un astronomija

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title = "The time-resolved luminescence characteristics of Ce and Ce/Pr doped YAG ceramics obtained by high pressure technique",

abstract = "Transparent Ce and Ce/Pr doped YAG ceramics were prepared under high pressures (up to 8 GPa) and relative low temperature (450 °C). Grain size of the ceramics is less than 50 nm. However unknown defects or disorders strains on grain boundaries caused the additional absorption in these ceramics. The luminescence intensity, spectra and the decay time dependence on pressure applied during ceramic preparation were studied. Concentration of some intrinsic point defect was reduced under the high pressure applied for sintering process. It is shown that formation time of the excited state of Ce luminescence depends on the pressure applied during ceramic sintering.",

keywords = "Photoluminescence, Time-resolved luminescence, YAG ceramic",

author = "L. Grigorjeva and D. Millers and K. Smits and A. Sarakovskis and W. Lojkowski and A. Swiderska-Sroda and W. Strek and P. Gluchowski",

year = "2012",

month = apr,

doi = "10.1016/j.optmat.2011.05.023",

language = "English",

volume = "34",

pages = "986--989",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

number = "6",

}

TY - JOUR

T1 - The time-resolved luminescence characteristics of Ce and Ce/Pr doped YAG ceramics obtained by high pressure technique

AU - Grigorjeva, L.

AU - Millers, D.

AU - Smits, K.

AU - Sarakovskis, A.

AU - Lojkowski, W.

AU - Swiderska-Sroda, A.

AU - Strek, W.

AU - Gluchowski, P.

PY - 2012/4

Y1 - 2012/4

N2 - Transparent Ce and Ce/Pr doped YAG ceramics were prepared under high pressures (up to 8 GPa) and relative low temperature (450 °C). Grain size of the ceramics is less than 50 nm. However unknown defects or disorders strains on grain boundaries caused the additional absorption in these ceramics. The luminescence intensity, spectra and the decay time dependence on pressure applied during ceramic preparation were studied. Concentration of some intrinsic point defect was reduced under the high pressure applied for sintering process. It is shown that formation time of the excited state of Ce luminescence depends on the pressure applied during ceramic sintering.

AB - Transparent Ce and Ce/Pr doped YAG ceramics were prepared under high pressures (up to 8 GPa) and relative low temperature (450 °C). Grain size of the ceramics is less than 50 nm. However unknown defects or disorders strains on grain boundaries caused the additional absorption in these ceramics. The luminescence intensity, spectra and the decay time dependence on pressure applied during ceramic preparation were studied. Concentration of some intrinsic point defect was reduced under the high pressure applied for sintering process. It is shown that formation time of the excited state of Ce luminescence depends on the pressure applied during ceramic sintering.

KW - Photoluminescence

KW - Time-resolved luminescence

KW - YAG ceramic

UR - https://www.scopus.com/pages/publications/84857656392

UR - https://www.sciencedirect.com/science/article/pii/S0925346711002886

U2 - 10.1016/j.optmat.2011.05.023

DO - 10.1016/j.optmat.2011.05.023

M3 - Article

AN - SCOPUS:84857656392

SN - 0925-3467

VL - 34

SP - 986

EP - 989

JO - Optical Materials

JF - Optical Materials

IS - 6

ER -

The time-resolved luminescence characteristics of Ce and Ce/Pr doped YAG ceramics obtained by high pressure technique

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