Three-dimensional modelling of dopant transport in gas and melt during FZ silicon crystal growth

A. Sabanskis; K. Surovovs; J. Virbulis

doi:10.22364/mhd.51.1.15

Three-dimensional modelling of dopant transport in gas and melt during FZ silicon crystal growth

Skaitliskās modelēšanas institūts

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

3 Atsauces (Scopus)

Kopsavilkums

Three-dimensional (3D) steady-state modelling of inert gas flow and dopant transport in a floating zone puller has been carried out for the first time. The obtained results are analyzed regarding their effect on heat and dopant transfer and used to specify the concentration boundary conditions for 3D transient simulations of dopant transport in liquid silicon. The calculated radial resistivity variations in the crystal were compared with experiment.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	157-170
Lapu skaits	14
Žurnāls	Magnetohydrodynamics
Sējums	51
Izdevuma numurs	1
DOIs	https://doi.org/10.22364/mhd.51.1.15
Publikācijas statuss	Publicēts - 2015

OECD Zinātnes nozare

1.3 Fizika un astronomija

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title = "Three-dimensional modelling of dopant transport in gas and melt during FZ silicon crystal growth",

abstract = "Three-dimensional (3D) steady-state modelling of inert gas flow and dopant transport in a floating zone puller has been carried out for the first time. The obtained results are analyzed regarding their effect on heat and dopant transfer and used to specify the concentration boundary conditions for 3D transient simulations of dopant transport in liquid silicon. The calculated radial resistivity variations in the crystal were compared with experiment.",

author = "A. Sabanskis and K. Surovovs and J. Virbulis",

year = "2015",

doi = "10.22364/mhd.51.1.15",

language = "English",

volume = "51",

pages = "157--170",

journal = "Magnetohydrodynamics",

issn = "0024-998X",

publisher = "University of Latvia",

number = "1",

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TY - JOUR

T1 - Three-dimensional modelling of dopant transport in gas and melt during FZ silicon crystal growth

AU - Sabanskis, A.

AU - Surovovs, K.

AU - Virbulis, J.

PY - 2015

Y1 - 2015

N2 - Three-dimensional (3D) steady-state modelling of inert gas flow and dopant transport in a floating zone puller has been carried out for the first time. The obtained results are analyzed regarding their effect on heat and dopant transfer and used to specify the concentration boundary conditions for 3D transient simulations of dopant transport in liquid silicon. The calculated radial resistivity variations in the crystal were compared with experiment.

AB - Three-dimensional (3D) steady-state modelling of inert gas flow and dopant transport in a floating zone puller has been carried out for the first time. The obtained results are analyzed regarding their effect on heat and dopant transfer and used to specify the concentration boundary conditions for 3D transient simulations of dopant transport in liquid silicon. The calculated radial resistivity variations in the crystal were compared with experiment.

UR - https://www.scopus.com/pages/publications/84928311869

U2 - 10.22364/mhd.51.1.15

DO - 10.22364/mhd.51.1.15

M3 - Article

AN - SCOPUS:84928311869

SN - 0024-998X

VL - 51

SP - 157

EP - 170

JO - Magnetohydrodynamics

JF - Magnetohydrodynamics

IS - 1

ER -

Three-dimensional modelling of dopant transport in gas and melt during FZ silicon crystal growth

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