Using of EM fields during industrial CZ and FZ large silicon crystal growth

Alfred Mühlbauer; Andris Muiznieks; Gundars Ratnieks; Armands Krauze; Georg Raming; Thomas Wetzel

doi:10.1108/03321640310452222

Using of EM fields during industrial CZ and FZ large silicon crystal growth

Alfred Mühlbauer^*
, Andris Muiznieks
, Gundars Ratnieks
, Armands Krauze
, Georg Raming
, Thomas Wetzel

^*Šī darba korespondējošais autors

Skaitliskās modelēšanas institūts

Leibniz University Hannover
Siltronic AG

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

2 Atsauces (Scopus)

Kopsavilkums

The paper describes numerical simulation tools for electromagnetic (EM), hydrodynamic, temperature and concentration fields in industrial Czochralski (CZ) and floating zone (FZ) single silicon crystal growth facilities under the influence of several alternating current (AC) and static DC magnetic fields. Such fields are expected to provide additional means to influence the melt behaviour, especially in the industrial growth of large diameter (200-300 mm) silicon crystals. The simulation tools are based on axisymmetric 2D models for (1) AC and DC magnetic fields in the whole crystal growth facility and (2) hydrodynamics, temperature and mass transport in the melt under the influence of the EM fields. The simulation tools are verified by comparison to temperature and velocity measurements in a laboratory CZ set-up with eutectics InGaSn model melt and to resistivity measurements in grown silicon crystals.

Oriģinālvaloda	Angļu
Lapas (no-līdz)	123-133
Lapu skaits	11
Žurnāls	COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
Sējums	22
Izdevuma numurs	1
DOIs	https://doi.org/10.1108/03321640310452222
Publikācijas statuss	Publicēts - 2003

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@article{8a360a1955dd48b2a1ac6db3644dfdb4,

title = "Using of EM fields during industrial CZ and FZ large silicon crystal growth",

abstract = "The paper describes numerical simulation tools for electromagnetic (EM), hydrodynamic, temperature and concentration fields in industrial Czochralski (CZ) and floating zone (FZ) single silicon crystal growth facilities under the influence of several alternating current (AC) and static DC magnetic fields. Such fields are expected to provide additional means to influence the melt behaviour, especially in the industrial growth of large diameter (200-300 mm) silicon crystals. The simulation tools are based on axisymmetric 2D models for (1) AC and DC magnetic fields in the whole crystal growth facility and (2) hydrodynamics, temperature and mass transport in the melt under the influence of the EM fields. The simulation tools are verified by comparison to temperature and velocity measurements in a laboratory CZ set-up with eutectics InGaSn model melt and to resistivity measurements in grown silicon crystals.",

keywords = "Crystal growth, Electromagnetic fields, Mathematical modelling, Silicon",

author = "Alfred M{\"u}hlbauer and Andris Muiznieks and Gundars Ratnieks and Armands Krauze and Georg Raming and Thomas Wetzel",

year = "2003",

doi = "10.1108/03321640310452222",

language = "English",

volume = "22",

pages = "123--133",

journal = "COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering",

issn = "0332-1649",

publisher = "Emerald Publishing",

number = "1",

}

Using of EM fields during industrial CZ and FZ large silicon crystal growth. / Mühlbauer, Alfred; Muiznieks, Andris; Ratnieks, Gundars u.c.
(gadā): COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, Sēj. 22, Nr. 1, 2003, lpp. 123-133.

Zinātniskās darbības rezultāts: Devums žurnālam › Zinātniskais raksts (žurnālā) › koleģiāli recenzēts

TY - JOUR

T1 - Using of EM fields during industrial CZ and FZ large silicon crystal growth

AU - Mühlbauer, Alfred

AU - Muiznieks, Andris

AU - Ratnieks, Gundars

AU - Krauze, Armands

AU - Raming, Georg

AU - Wetzel, Thomas

PY - 2003

Y1 - 2003

N2 - The paper describes numerical simulation tools for electromagnetic (EM), hydrodynamic, temperature and concentration fields in industrial Czochralski (CZ) and floating zone (FZ) single silicon crystal growth facilities under the influence of several alternating current (AC) and static DC magnetic fields. Such fields are expected to provide additional means to influence the melt behaviour, especially in the industrial growth of large diameter (200-300 mm) silicon crystals. The simulation tools are based on axisymmetric 2D models for (1) AC and DC magnetic fields in the whole crystal growth facility and (2) hydrodynamics, temperature and mass transport in the melt under the influence of the EM fields. The simulation tools are verified by comparison to temperature and velocity measurements in a laboratory CZ set-up with eutectics InGaSn model melt and to resistivity measurements in grown silicon crystals.

AB - The paper describes numerical simulation tools for electromagnetic (EM), hydrodynamic, temperature and concentration fields in industrial Czochralski (CZ) and floating zone (FZ) single silicon crystal growth facilities under the influence of several alternating current (AC) and static DC magnetic fields. Such fields are expected to provide additional means to influence the melt behaviour, especially in the industrial growth of large diameter (200-300 mm) silicon crystals. The simulation tools are based on axisymmetric 2D models for (1) AC and DC magnetic fields in the whole crystal growth facility and (2) hydrodynamics, temperature and mass transport in the melt under the influence of the EM fields. The simulation tools are verified by comparison to temperature and velocity measurements in a laboratory CZ set-up with eutectics InGaSn model melt and to resistivity measurements in grown silicon crystals.

KW - Crystal growth

KW - Electromagnetic fields

KW - Mathematical modelling

KW - Silicon

UR - https://www.scopus.com/pages/publications/0041704529

U2 - 10.1108/03321640310452222

DO - 10.1108/03321640310452222

M3 - Article

AN - SCOPUS:0041704529

SN - 0332-1649

VL - 22

SP - 123

EP - 133

JO - COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

JF - COMPEL - The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

IS - 1

ER -

Using of EM fields during industrial CZ and FZ large silicon crystal growth

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