TY - GEN
T1 - Way to producing of the prefect sapphire crystals
AU - Flerov, Vladimir
AU - Flerov, Alexei
AU - Musatov, Michael
PY - 1994
Y1 - 1994
N2 - It is elaborated the crystal growth technique on base of Cyropulos method that allows to receive the sapphire single crystals of high quality with small dislocation density, low levels of X-ray luminescence and thermoluminescence, high transparency, and high radiation resistance. The main features of developed technique are: low temperature gradient in growth zone, acute-angled crystallization front, and absence of any mechanical displacement during growing process. Some other growing factors influencing on crystal quality are discussed.
AB - It is elaborated the crystal growth technique on base of Cyropulos method that allows to receive the sapphire single crystals of high quality with small dislocation density, low levels of X-ray luminescence and thermoluminescence, high transparency, and high radiation resistance. The main features of developed technique are: low temperature gradient in growth zone, acute-angled crystallization front, and absence of any mechanical displacement during growing process. Some other growing factors influencing on crystal quality are discussed.
UR - https://www.scopus.com/pages/publications/0027969864
M3 - Conference paper
AN - SCOPUS:0027969864
SN - 1558992286
T3 - Materials Research Society Symposium Proceedings
SP - 51
EP - 56
BT - New Materials for Advanced Solid State Lasers
PB - Publ by Materials Research Society
T2 - Proceedings of the 1993 Fall Meeting
Y2 - 29 November 1993 through 1 December 1993
ER -