X-ray absorption study of gallium arsenide at the Ga and as K-edges

We present X-ray absorption study of gallium arsenide at the Ga and As AT-edges. The analysis of the X-ray absorption fine structure was done in the framework of the multiple-scattering theory. Both XANES and EXAFS regions are considered. The calculated signals are in very good agreement with experimental data. It is shown that for both edges multiple-scattering contributions are negligible for wavevector values greater than 3 Å^-1, and single-scattering analysis can be used without significant loss of accuracy in that region.